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January 2001
SI4925DY Dual P-Channel, Logic Level, PowerTrench(R) MOSFET
General Description
These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Features
-6 A, -30 V. RDS(ON) = 0.032 @ VGS = -10 V, RDS(ON) = 0.045 @ VGS = -4.5 V. Low gate charge (14.5nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D2 D1 D1 D2
5 4 3 2 1
49
25
G2
6 7 8
SO-8
pin 1
S1
G1
S2
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA = 25oC unless otherwise noted SI4925DY -30 20
(Note 1a)
Units V V A
-6 -20 2
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
W
1.6 1 0.9 -55 to 150 C
TJ,TSTG RJA RJC
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
C/W C/W
(c) 2001 Fairchild Semiconductor International
SI4925DY Rev.A
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, I D = -250 A ID = -250 A, Referenced to 25 C VDS = -24 V, VGS = 0 V TJ = 55C IGSSF IGSSR VGS(th) Gate - Body Leakage, Forward Gate - Body Leakage, Reverse
(Note 2)
o
-30 -21 -1 -10 100 -100 -1 -1.7 4 0.025 TJ =125C 0.033 0.034 -20 16 1540 400 170 0.032 0.051 0.045 -3
V mV/oC A A nA nA V mV/oC
BVDSS/TJ
IDSS
VGS = 16 V, VDS = 0 V VGS = -16 V, VDS = 0 V VDS = VGS, ID = -250 A ID = 250 A, Referenced to 25 oC VGS = -10 V, I D = -6 A VGS = -4.5 V, I D = -5 A
ON CHARACTERISTICS
Gate Threshold Voltage Gate Threshold Voltage Temp. Coefficient Static Drain-Source On-Resistance
VGS(th)/TJ
RDS(ON)
ID(ON) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD
Notes:
On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VGS = -10 V, VDS = -5 V VDS = -10 V, I D = -6 A VDS = -15 V, VGS = 0 V, f = 1.0 MHz
A S pF pF pF 24 35 75 30 20 ns ns ns ns nC nC nC -1.3 A V
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDS = -15 V, I D = -1 A VGEN = -10 V, RGEN = 6
13 22 47 18
VDS = -10 V, I D = -6 A, VGS = -5 V
14.5 4 5
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A
(Note 2)
-0.73
-1.2
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a. 78OC/W on a 0.5 in2 pad of 2oz copper.
b. 125OC/W on a 0.02 in2 pad of 2oz copper.
c. 135OC/W on a 0.003 in2 pad of 2oz copper.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
SI4925DY Rev.A
Typical Electrical Characteristics
30 - I D, DRAIN-SOURCE CURRENT (A) DRAIN-SOURCE ON-RESISTANCE
VGS = -10V -6.0V
2.5
-4.5V
R DS(ON), NORMALIZED
24
2 V GS = -3.5V
18
-3.5V
-4.0 V
1.5
-4.5 V -5.5 V -7.0 V
12
-3.0V
6
1
-10V
0
0.5 0 1 -V
DS
2
3
4
5
0
6
, DRAIN-SOURCE VOLTAGE (V)
12 18 - I D , DRAIN CURRENT (A)
24
30
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Dain Current and Gate Voltage.
0.1
R DS(ON), ON-RESISTANCE (OHM)
1.6 DRAIN-SOURCE ON-RESISTANCE
1.4
I D= -6A VGS = -10V
I D = -3A
0.08
R DS(ON) , NORMALIZED
1.2
0.06
1
0.04
TA = 125C 25 C
0.8
0.02
0.6 -50
-25
0
25
50
75
100
125
150
0
2
TJ , JUNCTION TEMPERATURE ( C)
4 6 8 - VGS , GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation Temperature.
30
with
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
30
V DS = -5.0V
- I D, DRAIN CURRENT (A) 24
TJ = -55 C 25 C 125 C
- I S , REVERSE DRAIN CURRENT (A)
10
VGS = 0V TJ = 125 C 25 C
1
18
0.1
-55 C
12
6
0.01
0 1.5
0.001 2 2.5 3 3.5 4 4.5 0 0.3 0.6 0.9 1.2 1.5 - VGS , GATE TO SOURCE VOLTAGE (V) - VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
SI4925DY Rev.A
Typical Electrical Characteristics (continued)
10 - V GS, GATE-SOURCE VOLTAGE (V) 3000
ID = -6A
8
V DS = -5V
CAPACITANCE (pF)
2000
Ciss
-10V -15V
1000
6
500
Coss
4
2
200
f = 1 MHz VGS = 0 V
0.2 0.5 1 2 5
Crss
0 0 6 12 18 24 30 Q g , GATE CHARGE (nC)
100 0.1
10
20
30
- V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
30 10 - I D , DRAIN CURRENT (A) 3
IT LIM N) (O DS R
10
1m 10m
0u
30
s
25 20 15 10 5 0 0.01
s
s
1s
0.5
0.05
VGS = -10V SINGLE PULSE RJA =135C/W TA = 25C
0.3 1 2
10s DC
0.01 0.1
5
10
30
50
POWER (W)
10
s
SINGLE PULSE RJA =135C/W TA = 25C
0m
0.1
0.5
10
50 100
300
- V DS , DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1
D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk)
R JA (t) = r(t) * R JA R JA = 135C/W
t1
t2
TJ - TA = P * R JA(t) Duty Cycle, D = t1 /t2
10 100 300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
SI4925DY Rev.A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST
DISCLAIMER
FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM
PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. G

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